运用半导体二维数值模拟软件sentaurus TCAD, 对内线转移可见光CCD积分过程、读出过程光敏区域电势变化规律进行了数值模拟研究, 建立了sentaurus TCAD软件模拟内线转移CCD器件的仿真模型; 对影响器件电荷容量、抗晕性能的纵向抗晕p阱浓度、结深进行了模拟分析, 得出p阱浓度应控制在(2.5~5.5)×1016cm-3, 结深应控制在5.5~6.5μm的结论。

By using two-dimensional simulation software sentaurus TCAD, simulations were performed on the variable regularities of the potential of the photosensitive area for interline transfer charge coupled device(IT-CCD), and the simulation model was established. Based on simulation analysis on the charge capacity, the p-well concentration and junction depth, it is concluded that the optimal parameters of p-well concentration and depth should be controlled as 2.5×1016~5.5×1016cm-3 and 5.5~6.5μm, respectively.