利用金属有机物化学气相沉积法在蓝宝石衬底上制备了ZnO薄膜。利用Au电极, 在ZnO薄膜上制备电极间距不同的金属-半导体-金属结构紫外光电探测器。发现随着电极间距从150 μm降至5 μm, 探测器响应度呈现出从15 mA/W到75 mA/W的明显提高。同时, 随着电极间距的减小, 器件的I-V曲线线形发生了显著改变。这被归结为电极间距变化改变了器件耗尽区宽度和电极间电阻造成的结果。

By using mental-organic chemical vapor deposition, ZnO films were prepared on sapphire substrate in this work. Three MSM ultraviolet photodetectors with different electrode spacings were fabricated on ZnO films. The detector responsivity achieves marked increase from 15 mA/W to 75 mA/W as the electrode spacing decreases from 150 μm to 5 μm. At the same time, with the decrease of the electrode spacing, I-V curve of the device changes significantly. It is attributed to that the electrode spacing affects the properties of MSM photodetectors because it results in different depletion region width and the resistance between the electrode.