利用化学气相沉积法(CVD)在表面溅射Au和沉积ZnO籽晶的硅衬底上分别生长高度有序、垂直密布的直立Zn2GeO4/ZnO纳米棒阵列, 利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和光致发光(PL)谱测试手段对所制备样品进行表征和发光特性的研究。所制备的Zn2GeO4/ZnO纳米棒的直径为350~400 nm, 高度为10~11 μm;室温PL谱观察到3个来源于Zn2GeO4的典型发光峰。最后, 对CVD法制备的Zn2GeO4/ZnO纳米棒生长机理进行了分析。该种直立性良好的一维纳米棒材料可以广泛地应用到纳米光电子器件中。

Upright Zn2GeO4/ZnO nanorod arrays were prepared on silicon wafer with two kinds of seed layers (metal Au and ZnO seed) by the chemical vapor deposition(CVD) method. Scanning electron microscopy (SEM), X-ray diffractometer (XRD) and photoluminescence (PL) measurements were used to characterize the samples and reaseach its luminescence properties. The results show that the radius of Zn2GeO4/ZnO nanorod is 350-400 nm and the length is 10-11 μm. The photoluminescence spectrum (PL) of Zn2GeO4 nanorods exhibites three fluorescence emission peaks centered at 415, 445, 488 nm. Moreover, a detailed description of the probable growth mechanism of the upright Zn2GeO4/ZnO nanorod arrays was discussed. Its vertical orientation is desirable for use in optoelectronic field.