从量子力学角度分析银铝共掺硫化锌可以作为高效电子传输层材料, 从理论上计算出杂质原子的波尔半径, 对于银铝共掺硫化锌作为高效的电子传输层的最佳厚度给出了理论参考值。利用银铝共掺硫化锌作为电子传输层, 制备了结构为ITO/NPB/Alq3/ZnS∶Ag-Al(x)/PBD/Al的有机电致发光器件, 分析了不同厚度的银铝共掺硫化锌电子传输层对器件发光强度的影响, 并对共掺硫化锌中载流子传输机制进行了分析。实验发现共掺硫化锌具有良好的空穴阻挡和电子传输性能。当银铝共掺硫化锌电子传输层厚度为8 nm时, 器件的相对发光强度和电致发光强度相对于没有电子传输层的器件分别增加了430倍和130倍, 器件的阈值电压也降低了4 V。与纯硫化锌作为电子传输层器件相比, 相对发光强度提高3倍。

The possibility of ZnS∶Ag-Al film as highly efficiency electron transfer layer (ETL) was analyzed, and the Bohr radius of impurity atoms was calculated by using quantum theory. The best efficient thickness of theoretical reference value was given for the Ag-Al co-doped ZnS as ETL. The organic light-emitting devices (OLEDs) which use the Ag-Al co-doped ZnS film as ETL were fabricated with the structure of ITO/NPB/Alq3/ZnS∶Ag-Al(x)/PBD/Al. The effect of Ag-Al co-doped ZnS ETL thickness to the characters of OLEDs were investigated in experiments. It is shown that the relative luminescence intensity and electroluminescence intensity of device with co-doped ZnS ETL (8 nm) increase by 430 times and 130 times respectively as compared to device without ETL. Besides, the turn-on voltage is reduced about 4 V. Comparing with OLED with un-doped ZnS ETL, the relative luminescence intensity of Ag-Al co-doped ZnS ETL devices was enhanced by 3 times. The studied results reveal that Ag-Al co-doped ZnS behaves ideal proprieties of electrons transporting and hole blocking properties. Thus it can be expected that Ag-Al co-doped ZnS could be used as other organic photo-electronic devices.