对激光辐照PV型的Hg1-xCdxTe单元探测器的响应特性进行了研究, 建立了材料内部光生电动势变化的数学分析模型。计算了不同光源辐照3类组分不同的Hg1-xCdxTe探测单元的输出特性, 并对温度波动影响进行了分析。结果表明: 在光敏面积恒定时, x值越大探测器的完全饱和电压越大, 即探测器的响应度Hg0.627Cd0.373Te＞Hg0.698Cd0.302Te＞Hg0.819Cd0.181Te; x值越小, 探测器受温度波动的影响越小。

The response characteristics of the photovoltaic HgCdTe infrared detectors are studied in detail. The mathematical analysis model of the photovoltaic effect is established. With this model, the output characteristics of the Hg1-xCdx Tedetection unit with different components x are calculated. Furthermore, the effects of the temperature fluctuations on the output characteristics are discussed. The results show that when the photosensitive area is constant, the saturation voltage will increase with the value of x. And with the small value x, the detector will get smaller influence on the temperature fluctuations.