We present photonics technology based on a bulk-Si substrate for cost-sensitive dynamic random-access memory (DRAM) optical interface application. We summarize the progress on passive and active photonic devices using a local-crystallized Si waveguide fabricated by solid phase epitaxy or laser-induced epitaxial growth on bulk-Si substrate. The process of integration of a photonic integrated circuit (IC) with an electronic IC is demonstrated using a 65 nm DRAM periphery process on 300 mm wafers to prove the possibility of seamless integration with various complementary metal-oxide-semiconductor devices. Using the bulk-Si photonic devices, we show the feasibility of high-speed multidrop interface: the Mach–Zehnder interferometer modulators and commercial photodetectors are used to demonstrate four-drop link operation at 10 Gb/s, and the transceiver chips with photonic die and electronic die work for the DDR3 DRAM interface at 1.6 Gb/s under a 1∶4 multidrop configuration.