研究了1.16 mm GaN基蓝光芯片的垂直封装结构LED和倒装封装结构LED在驱动电流达到和超过工作电流350 mA的发光特性和变化趋势。随着驱动电流的逐渐增大, 与垂直结构LED相比, 倒装结构LED光通量的饱和电流值增加350 mA, 在1 200 mA电流时的光通量高出25.9%, 色温的异常电流值增加了400 mA, 发光效率平均提高8l m/W。实验结果表明, 倒装结构LED具有更高的抗大电流冲击稳定性和光输出性能, 可有效提高LED在实际应用中使用寿命。

When driving current is or more than 350 mA operation current, the optical characterization and variation trend of vertical and flip-chip structure light-emitting chip (LED) of 1.16 mm GaN-based blue light chip are researched. With the increasing of the driving current value, comparing with that of vertical structure LED, the luminous flux saturation current value of flip-chip structure LED is increased 350 mA. At the condition of 1 200 mA current value, the luminous flux value is more than 25.9%, the abnormal current value of color temperature is increased 400 mA and luminous efficiency is increased 81 m/W in average. Experimental results show that flip-chip structure LED has better anti-impulse stability from high power current and optical output characterization. And the operation life of LED in application is improved effectively.