为了提高980 nm半导体激光器的出光功率，在外延结构中加入了扩展波导，并优化了激光器的垒层厚度和波导层组分，将光场以有源区为中心的对称分布转化为以扩展波导和有源区同为中心的对称分布，降低了有源区限制因子，提高了输出功率，同时增加了出光面积，降低了器件腔面的光功率密度，避免器件出现光学灾变损伤。

In order to improve the optical power of 980 nm semiconductor laser, the extension waveguide is added to the epitaxy structure. The laser barrier layer thickness and the waveguide component are optimized. The light field is shifted to the center constituted by both the active region and extension waveguide layer from the center of quantum well with symmetric pattern, the limiting factors is reduced , and the output power is increased. The optical power density at output window is decreased since the optical field in vertical direction is enlarged, and thus the catastrophic optical damage is avoided.