传统分析介质板次级电子倍增问题的粒子追踪算法方法存在运算耗时长、运算量大等缺点，为此采用统计方法实现了倾斜强直流场下介质击穿过程中次级电子倍增效应的数值模拟，给出了击穿过程中电子数量，电子渡越时间等关键参数的时间图像，同时研究了倾斜角、介质表面光滑度和次级电子产生率对次级电子倍增效应的影响。研究结果表明：强直流场下的次级电子倍增效应存在倾斜角的区域，倾斜角太大或者太小，都可能不会发生次级电子倍增效应，如果倾斜角位于区域内，则饱和状态时电子数目随着倾斜角度的变大而变小;选取光滑系数和次级电子产生系数越小的介质材料，抑制次级电子倍增效应的效果越好。

The traditional method used for analyzing the multipactor of the dielectric is particleincell method, but it has some shortcomings, such as timeconsuming, large amount of computation and so on. The numerical simulation of multipactor in the dielectric surface breakdown in strong oblique DC field is realized by using statistical methods. The VT graphs of the number of secondary electrons, average transit time and other key parameters are given. The influence of the smooth surface coefficient and the secondary electron yield coefficient of dielectric on the multipactor are investigated. The results show that the multipactor exists in the tilt angle area under strong oblique DC field, the multipactor may not occur while the tilt angle is too large or too small. If the tilt angle is located in susceptible area, the number of electrons in saturation will gain inversely with the inclination angle. Choosing the dielectric material with lower secondary electron yield coefficient, we can get a better inhibiting performance of multipactor.