通过开展非相干强光对高性能超二代微光像增强器的饱和干扰实验, 得到了非相干强光对高性能超二代微光像增强器的干扰现象, 对其干扰图像、干扰过程和干扰后恢复情况进行了分析, 研究了强光辐射对微光像增强器电子增益的影响, 分析了干扰光辐射照度与干扰形成光斑尺寸之间的关系。

In this paper, the saturated jamming against Super Gen II+ Image Intensifier by incoherent light was studied by experiment and simulation. The jamming image, jamming process and recovery time were analyzed through its interference phenomenon. The influences of incoherent light intensity to electron gain and jamming spot size of the image intensifier were researched. The detailed analysis was done and some valuable conclusions were made.