InAlSb/InSb薄膜材料的晶体质量会直接影响器件的性能。提高薄膜材料的晶体质量可以有效降低器件的暗电流，提高探测率和均匀性等。主要报道了掺铝锑化铟分子束外延技术的初步研究结果。通过采用多种测试方法对InAlSb分子束外延膜的晶体质量进行了分析，找出了影响晶体质量的因素，提高了InAlSb分子束外延的技术水平。实验结果表明，通过优化生长温度、束流比、升降温速率以及退火工艺等生长条件，可以获得高质量的InAlSb分子束外延膜。

The crystal quality of InAlSb/InSb film materials may directly affect the performance of the eventual detection devices. To improve the crystal quality of film materials not only can reduce the dark current of detection devices, butalso can improve the detectivity and uniformity of them. The preliminary result of a Molecular Beam Epitaxy (MBE) method for aluminum-doped InSb materials is reported. The crystal quality of the InAlSb film grown by MBE is analyzed by using a variety of test and analysis methods. The factors which have influence on the crystal quality are found out and the technical level of the MBE of InAlSb film materials is improved. The experimental result shows that through optimization of the growth conditions suchas growth temperature, beam ratio, cooling rate and annealing process, high quality MBE InAlSb film materials can be obtained.