首页 > 论文 > Frontiers of Optoelectronics > 7卷 > 3期(pp:293--1)

Recent progresses on InGaN quantum dot light-emitting diodes

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

Abstract

InGaN quantum dots (QDs) have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes (LEDs). In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.

Newport宣传-MKS新实验室计划
补充资料

DOI:10.1007/s12200-014-0425-3

所属栏目:REVIEW ARTICLE

基金项目:Acknowledgements This work was supported by the National Basic Research Program of China (Nos. 2013CB632804, 2011CB301900 and 2012CB3155605), the National Natural Science Foundation of China (Grant Nos. 61176015, 61210014, 51002085, 61321004, 61307024 and 61176059), and the High Technology Research and Development Program of China (Nos. 2011AA03A112, 2011AA03A106, 2011AA03A105 and 2012AA050601).

收稿日期:2014-03-03

修改稿日期:2014-04-29

网络出版日期:--

作者单位    点击查看

Lai WANG:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Wenbin LV:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Zhibiao HAO:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Yi LUO:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

联系人作者:Lai WANG(wanglai@tsinghua.edu.cn)

备注:Lai Wang received his BS and PhD degrees from Tsinghua University in 2003 and 2008, respectively, all in Electronic Engineering. Associate Prof. Lai Wang’s current research interests include: MOCVD growth and characterization of III-nitride materials and their applications; carrier dynamics and efficiency droop in InGaN MQWs; InGaN QDs and light-emitting devices; detectors and sensors.

【1】Taguchi T. Present status of energy saving technologies and future prospect in white LED lighting. IEEJ Transactions on Electrical and Electronic Engineering, 2008, 3(1): 21–26

【2】Wang Q, Wang T, Bai J, Cullis A G, Parbrook P J, Ranalli F. Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes. Applied Physics Letters, 2008, 93(8): 081915-1–081915-3

【3】Jarjour A F, Taylor R A, Oliver R A, Kappers M J, Humphreys C J, Tahraoui A. Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot. Applied Physics Letters, 2007, 91(5): 052101-1–052101-3

【4】Detchprohm T, Zhu M W, Li Y F, Zhao L, You S, Wetzel C, Preble E A, Paskova T, Hanser D. Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates. Applied Physics Letters, 2010, 96(5): 051101-1–051101-3

【5】Detchprohm T, Zhu M W, Li Y F, Xia Y, Wetzel C, Preble E A, Liu L H, Paskova T, Hanser D. Green light emitting diodes on a-plane GaN bulk substrates. Applied Physics Letters, 2008, 92(24): 241109-1–241109-3

【6】Lin Y D, Chakraborty A, Brinkley S, Kuo H C, Melo T, Fujito K, Speck J S, DenBaars S P, Nakamura S. Characterization of bluegreen m-plane InGaN light emitting diodes. Applied Physics Letters, 2009, 94(26): 261108-1–261108-3

【7】Funato M, Ueda M, Kawakami Y, Narukawa Y, Kosugi T, Takahashi M, Mukai T. Blue, green, and amber InGaN/GaN lightemitting diodes on semipolar {11-22} GaN bulk substrates. Japanese Journal of Applied Physics, 2006, 45(7L): L659

【8】Sato H, Tyagi A, Zhong H, Fellows N, Chung R B, Saito M, Fujito K, Speck J S, DenBaars S P, Nakamura S. High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate. Physica Status Solidi. Rapid Research Letters, 2007, 1(4): 162–164

【9】Yamamoto S, Zhao Y J, Pan C C, Chung R B, Fujito K, Sonoda J, DenBaars S P, Nakamura S. High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20)GaN substrates. Applied Physics Express, 2010, 3(12): 122102

【10】Feezell D F, Schmidt M C, DenBaars S P, Nakamura S. Development of nonpolar and semipolar InGaN/GaN visible lightemitting diodes. MRS Bulletin, 2009, 34(5): 318–323

【11】Young E C, Wu F, Romanov A E, Tyagi A, Gallinat C S, DenBaars S P, Nakamura S, Speck J S. Lattice tilt and misfit dislocations in (11) semipolar GaN heteroepitaxy. Applied Physics Express, 2010, 3(1): 11004-1–11004-4

【12】Craven M D, Lim S H, Wu F, Speck J S, DenBaars S P. Threading dislocation reduction via laterally overgrown nonpolar (1120) aplane GaN. Applied Physics Letters, 2002, 81(7): 1201–1203

【13】Masui H, Nakamura S, DenBaars S P, Mishra U K, Ieee T. Nonpolar and semipolar III-nitride light-emitting diodes: achievements and challenges. IEEE Transactions on Electron Devices, 2010, 57(1): 88–100

【14】Zhao W, Wang L, Wang J X, Hao Z B A, Luo Y. Theoretical study on critical thicknesses of InGaN grown on (0001) GaN. Journal of Crystal Growth, 2011, 327(1): 202–204

【15】People R, Bean J C. Calculation of critical layer thickness versus lattice mismatch for GexSi1 – x/Si strained-layer heterostructures. Applied Physics Letters, 1985, 47(3): 322–324

【16】Nakajima K. Equilibrium phase diagrams for Stranski-Krastanov structure mode of III–V ternary quantum dots. Japanese Journal of Applied Physics, 1999, 38(4R): 1875

【17】Zhao W, Wang L, Lv W B, Wang L, Wang J X, Hao Z B, Luo Y. Growth behavior of high-indium-composition InGaN quantum dots using growth interruption method. Japanese Journal of Applied Physics, 2011, 50(6R): 065601

【18】Yao H H, Lu T C, Huang G S, Chen C Y, Liang W D, Kuo H C, Wang S C. InGaN self-assembled quantum dots grown by metal–organic chemical vapour deposition with growth interruption. Nanotechnology, 2006, 17(6): 1713–1716

【19】Ji L W, Su Y K, Chang S J, Wu L W, Fang T H, Chen J F, Tsai T Y, Xue Q K, Chen S C. Growth of nanoscale InGaN self-assembled quantum dots. Journal of Crystal Growth, 2003, 249(1–2): 144–148

【20】Ee Y K, Zhao H P, Arif R A, Jamil M, Tansu N. Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 2008, 310(7–9): 2320–2325

【21】Bayram C, Razeghi M. Density-controlled growth and field emission property of aligned ZnO nanorod arrays. Applied Physics A, 2009, 97(2): 403–408

【22】Ji L W, Su Y K, Chang S J,Wu L W, Fang T H, Xue Q K, Lai WC, Chiou Y Z. A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition. Materials Letters, 2003, 57(26–27): 4218–4221

【23】Wang Q,Wang T, Parbrook P J, Bai J, Cullis A G. The influence of a capping layer on optical properties of self-assembled InGaN quantum dots. Journal of Applied Physics, 2007, 101(11): 113520-1–113520-7

【24】Wang Q,Wang T, Bai J, Cullis A G, Parbrook P J, Ranalli F. Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer. Journal of Applied Physics, 2008, 103(12): 123522-1–123522-4

【25】Bai J, Wang Q, Wang T, Cullis A G, Parbrook P J. Optical and microstructural study of a single layer of InGaN quantum dots. Journal of Applied Physics, 2009, 105(5): 53505-1–53502-5

【26】Lv W B, Wang L, Wang J X, Xing Y C, Zheng J Y, Yang D, Hao Z B, Luo Y. Green and red light-emitting diodes based on multilayer InGaN/GaN dots grown by growth interruption method. Japanese Journal of Applied Physics, 2013, 52(8S): 08JG13-1–08JG13-2

【27】Wang L, Zhao W, Lv WB,Wang L, Hao Z B, Luo Y. The influence of underlying layer on morphology of InGaN quantum dots selfassembled by metal organic vapor phase epitaxy. Physica Status Solidi C, 2012, 9(3–4): 782–785

【28】Lv W B, Wang L, Wang J, Hao Z, Luo Y. Density increase of upper quantum dots in dual InGaN quantum-dot layers. Chinese Physics Letters, 2011, 28(12): 128101-1–128101-3

【29】Lv W B, Wang L, Wang J, Hao Z, Luo Y. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers. Nanoscale Research Letters, 2012, 7(1): 617–624

【30】Lv W B, Wang L, Wang L, Xing Y C, Yang D, Hao Z B, Luo Y. InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength. Applied Physics Express, 2014, 7(2): 025203

引用该论文

Lai WANG,Wenbin LV,Zhibiao HAO,Yi LUO. Recent progresses on InGaN quantum dot light-emitting diodes[J]. Frontiers of Optoelectronics, 2014, 7(3): 293–299

Lai WANG,Wenbin LV,Zhibiao HAO,Yi LUO. Recent progresses on InGaN quantum dot light-emitting diodes[J]. Frontiers of Optoelectronics, 2014, 7(3): 293–299

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF