互补金属氧化物半导体(CMOS)有源像素(APS)图像传感器作为光电成像系统的核心器件, 被广泛应用在空间辐射或核辐射环境中, 辐照损伤是导致其性能退化, 甚至功能失效的主要原因之一。阐述了不同辐射粒子或射线辐照损伤诱发CMOS APS图像传感器产生位移效应、总剂量效应和单粒子效应的损伤物理机制。综述和分析了辐照损伤诱发CMOS APS图像传感器暗信号增大、量子效率减小、饱和输出电压减小、噪声增大以及暗信号尖峰和随机电码信号(RTS)产生的实验规律和损伤机理。归纳并提出了CMOS APS图像传感器辐照损伤效应研究亟待解决的问题。

As one of the key devices in photoelectric imaging systems, complementary metal oxide semiconductor (CMOS) active pixel sensors (APS) are widely used in the space or nuclear radiation environments, but the radiation damage is the main reason that causes the performance degradation of CMOS APS, and even functional failure. The physical mechanisms of the displacement, total dose, and single event effects on CMOS APS which caused by the different radiation particles or rays are presented. The experiments and damage mechanisms of the radiation damage inducing the increase of the dark signal and the noise, the decrease of the quantum efficiency and the saturation voltage, and the generation of dark signal spikes and random telegraph signal (RTS) are reviewed and analyzed. The challenges of the radiation damage effects on CMOS APS are discussed.