半导体光电, 2014, 35 (6): 1008, 网络出版: 2014-12-26
航天InGaAs短波红外探测器步进应力加速寿命试验研究
Study on Step-stress Accelerated Life Test for Space InGaAs Shortwave Infrared Device
摘要
随着航天应用InGaAs短波红外探测器的迅速发展, 其可靠性问题日益突出。选择温度为加速应力, 通过步进应力加速寿命试验方法对800×2双波段集成的InGaAs焦平面探测器进行了研究, 获得了InGaAs焦平面模块失效机理保持不变的最大温度应力范围和失效模式, 利用温度斜坡模型计算得到了样品的失效激活能, 为进一步研究该器件的可靠性问题提供了依据。
Abstract
With the development of InGaAs shortwave infrared detectors for space applications, the reliability of the devices is becoming more and more important. The reliability of double-band 800×2 FPA InGaAs detector was studied by step-stress accelerated life test at elevated temperatures. Both the failure mode and the highest temperature stress within which the failure mechanism keeps the same were obtained. The activation energy of degradation was estimated through temperature-slope models.
朱宪亮, 张海燕, 龚海梅. 航天InGaAs短波红外探测器步进应力加速寿命试验研究[J]. 半导体光电, 2014, 35(6): 1008. ZHU Xianliang, ZHANG Haiyan, GONG Haimei. Study on Step-stress Accelerated Life Test for Space InGaAs Shortwave Infrared Device[J]. Semiconductor Optoelectronics, 2014, 35(6): 1008.