红外与毫米波学报, 2014, 33 (6): 584, 网络出版: 2014-12-26
CMOS毫米波低功耗超宽带共栅低噪声放大器
Millimeter-wave low power UWB CMOS common-gate low-noise amplifier
毫米波 宽带 互补金属氧化物半导体(CMOS) 共栅 低噪声放大器(LNA) 集成电路(IC) millimeter-wave wide-band CMOS common-gate (CG) low-noise amplifier(LNA) integrated circuit (IC)
摘要
陈述了一个基于单端共栅与共源共栅级联结构的超宽带低噪声放大器(LNA).该LNA用标准90-nm RF CMOS工艺实现并具有如下特征: 在28.5～39GHz频段内测得的平坦增益大于10dB；-3dB带宽从27～42GHz达到了15GHz, 这几乎覆盖了整个Ka带；最小噪声系数(NF)为4.2dB, 平均NF在27~42GHz频段内为5.1dB；S11在整个测试频段内小于-11dB.40GHz处输入三阶交调点(IIP3)的测试值为+2dBm.整个电路的直流功耗为5.3mW.包括焊盘在内的芯片面积为0.58mm×0.48mm.
Abstract
This paper presents an Ultra-wideband (UWB) low-noise amplifier (LNA) based on a single-ended common-gate (CG) in cascade with cascode configuration. The proposed LNA was implemented by a standard 90-nm RF CMOS technology. The measured flat gain is more than 10dB from 28.5 to 39GHz. The -3dB bandwidth is 15GHz from 27 to 42GHz which covers almost the entire Ka band. The minimum noise figure (NF) is 4.2dB, and the average NF is 5.1dB within the 27～42GHz range. The S11 is better than -11dB over the overall testing band. The input 3rd-order intermodulation point (IIP3) is +2dBm at 40GHz. The DC power dissipation of the whole circuit is as low as 5.3mW. The chip occupies an area of 0.58mm×0.48mm including all pads.
杨格亮, 王志功, 李智群, 李芹, 刘法恩, 李竹. CMOS毫米波低功耗超宽带共栅低噪声放大器[J]. 红外与毫米波学报, 2014, 33(6): 584. YANG Ge-Liang, WANG Zhi-Gong, LI Zhi-Qun, LI Qin, LIU Fa-En, LI Zhu. Millimeter-wave low power UWB CMOS common-gate low-noise amplifier[J]. Journal of Infrared and Millimeter Waves, 2014, 33(6): 584.
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