由碲镉汞薄膜材料的厚度不均匀性入手, 改进水平滑舟液相外延工艺, 从而改善了碲镉汞薄膜材料组分均匀性, 使距薄膜边缘 1.5 mm(衬底边缘 2.5 mm)以内的薄膜材料组分均匀性得到了长足的提高, 增大了薄膜材料用于制备焦平面器件的利用率。中波碲镉汞材料(.1/2(77 K)＝4.8.m).x≤0.001, 与国外水平相当。

Through improving the thickness uniformity of HgCdTe films by optimizing the art of LPE in the slider technique, we have upgraded compositional uniformity of films. Within the border of films 1.5mm, the films’ composition is uniform. The area which can prepare for the infrared devices increases to a great extent..x-values of the MWIR films of HgCdTe(.1/2(77 K)＝4.8.m) are less than or equal to 0.001, which is same as the foreign level.