为了提高光子晶格的衍射效率,加快晶格写入时间,尝试在掺Fe浓度相同的双掺Mg:Fe:LN晶体([Fe:]0.03 wt.%,Mg:2.0 mol)和Fe:LN晶体([Fe:]0.03 wt.%)中分别用[λ]为488 nm半导体激光器和532 nm Nd:YGA固体激光器写入一维光子晶格,对比研究了两晶体内光子晶格最大衍射效率[η]和时间[t]的关系。实验结果表明,在双掺Mg:Fe:LN晶体内写入光子晶格时间比Fe:LN晶体所需时间短、衍射效率高。

For improving the diffraction efficiency of photonic lattice and shortening lattice writing time,a 488 nm semiconductor laser and a 532 nm Nd:YAG solid laser are respectively used to write one-dimensional photonic lattice in double doped Mg:Fe:LN and Fe:LN crystal with the same doped Fe concentration. The relationship between the maximum diffraction efficiency and time of the photonic lattice in the crystal is compared and researched. Experimental results show that the photonic lattice writing time in double doped Mg:Fe:LN crystal is shorter than that of Fe:LN crytal and the diffraction efficiency is higher than that of Fe:LN crystal.