激光与光电子学进展, 2015, 52 (2): 021602, 网络出版: 2015-01-21
基于SiO2膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究
Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation
摘要
在红光半导体激光器芯片上采用SiO2 介质膜进行无杂质空位扩散诱导量子阱混杂研究。激光器芯片的有源区是由两个6 nm 厚的GaInP 量子阱和三个8 nm 厚的AlGaInP 量子垒构成,利用电子束蒸发方法在芯片表面生长了250 nm SiO2介质膜。在不同温度下进行时长60 s 的高温快速退火诱发量子阱混杂。通过光致发光光谱分析样品混杂之后的波长蓝移情况和光谱半峰全宽变化规律。当退火温度达到900℃时,样品获得29.5 nm 的最大波长蓝移;在750℃的退火温度下获得43 nm 的最小光谱半峰全宽。
Abstract
Impurity-free vacancy diffusion (IFVD) induced quantum well intermixing (QWI) of red light diode laser wafer using silicon dioxide (SiO2) encapsulation is explored. The wafer has an active region of two 5 nm-thick GaInP quantum wells and three 8 nm-thick AlGaInP barriers. The 250 nm SiO2 dielectric layer is prepared through electron beam evaporation method. The QWI is induced by rapid thermal annealing for 60 s at different temperatures. Blue shifts and full width at half maximum (FWHM) are obtained through photoluminescence tests. A maximum blue shift of 29.5 nm is obtained at 900 °C annealing temperature and an optimal FWHM of 43 nm by the IFVD-induced QWI is noted at 750 ℃.
林涛, 张浩卿, 孙航, 王勇刚, 林楠, 马骁宇. 基于SiO2膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究[J]. 激光与光电子学进展, 2015, 52(2): 021602. Lin Tao, Zhang Haoqing, Sun Hang, Wang Yonggang, Lin Nan, Ma Xiaoyu. Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation[J]. Laser & Optoelectronics Progress, 2015, 52(2): 021602.