制备了单壁碳纳米管薄膜光电器件, 在偏压和激光器照射条件下可产生净光电流。分别研究了偏置电压、激光功率、照射位置对净光电流的影响。实验表明, 激光照射薄膜中点, 净光电流随着偏压的增大而增大, 随激光功率的增大而趋于饱和, 偏压为0.2 V, 激光功率为22.7 mW时, 净光电流达到0.24 μA;无偏压, 激光照射薄膜不同位置时, 净光电流值关于器件中心对称分布, 照射两端点输出最大光电流, 照射中点输出趋于“0”。经分析, 在偏压和激光照射薄膜中心位置的条件下, 器件因内光电效应可产生净光电流;在无偏压和激光照射的条件下, 因光热电效应可产生净光电流, 并建立了温度模型, 根据单壁碳纳米管的热电势特性推导出了净光电流与光照位置的关系, 其符合实验结果;内光电和光热电效应是光电流产生、变化的原因, 在偏压和激光照射的一般条件下, 净光电流应是两种效应的叠加结果。器件所具有的光电特性使其在光伏器件、光传感器有应用的潜力。

The single-walled carbon nanotube film photoelectric device was invented, and it can generate net photocurrent under bias voltage when it is illuminated by the laser. The influences of bias voltage, laser power and illuminating position on the net photocurrent were investigated. The experimental results showed that when the center of the film was illuminated, the photocurrent increased with the applied bias, but tended to saturate as the laser power increased. As the voltage and the laser power reached 0.2 V and 22.7 mW respectively, the photocurrent reached 0.24 μA. When the voltage was removed, the photocurrent varied with the laser illuminating position on the film and its value was distributed symmetrically about the center of the device. The photocurrent reached maximum and almost zero respectively when the laser illuminated on two ends and the center of the film. Analysis proposes that the net photocurrent can be generated due to internal photoelectric effect when the device is under voltage and the laser illuminates on the center of the film. It can be also generated due to photo-thermoelectric effect when the device is under no voltage and the laser illuminates on the film, and the relation between the net photocurrent and the illuminating position was derived according to the nature of thermoelectric power of single-walled carbon nanotubes with the established temperature model, which coincides with experimental result. Two effects are the reasons for the generation and variety of the net photocurrent and they superimpose to form the result of the net photocurrent when the device is under general conditions of voltage and laser illuminating position. The device has potential applications in the areas of photovoltaic device and optical sensor for its characteristic.