激光与光电子学进展, 2015, 52 (3): 031402, 网络出版: 2015-02-13
窄线宽776 nm激光器的实现及对铷蒸气激光器影响 下载: 534次
Realization of Narrow Linewidth 776 nm Laser and Its Impact on Rubidium Vapor Lasers
激光器 碱金属蒸气激光器 外腔半导体激光器 窄线宽 lasers alkali vapor laser external cavity semiconductor laser narrow linewidth Littrow Littrow
摘要
半导体抽运碱金属蒸气激光器(DPAL)是具有潜力的新型高能激光光源,高功率抽运条件下,铷原子会发生电离,对激光器性能产生负面影响。铷原子主要电离通道之一是抽运光谱(中心波长780 nm)和远翼776 nm 成分引起的5S→5P→5D 的级联效应以及后续的光电离过程。为了定量测量铷DPAL 电离度,需要搭建窄线宽776 nm 高功率半导体光源以模拟780 nm 抽运光的远翼光谱成分。基于Littrow 结构实现了窄线宽776 nm 半导体激光输出,激光线宽小于0.15 nm,功率大于10 W,外腔效率为67%;利用该激光器进行了780 nm 和776 nm 级联抽运实验,观察到显著增强的荧光信号。
Abstract
Diode-pumped alkali vapor laser (DPAL) is a candidate in high power laser field. Under conditions of high-power pumping, ionization process will occur in DPAL′s gain medium, which has a negative impact on laser performance. One of the main rubidium atomic ionization channel is cascaded effect (5S→5P→5D) induced by the 776 nm far wing spectral component of the 780 nm diode pump source. In order to quantitatively measure the degree of ionization of rubidium DPAL, frequency-narrowed 776 nm high power semiconductor light source is needed to simulate the far wing of 780 nm pump light. Based on Littrow configuration, a linenarrowed 776 nm semiconductor laser output is realized, with spectral linewidth of less than 0.15 nm, output power of more than 10 W, and external cavity efficiency of 67%. By using 780 nm and 776 nm cascade pumping, a significant enhancement of fluorescence signal has been observed.
左磊, 华卫红, 杨子宁, 王红岩, 许晓军. 窄线宽776 nm激光器的实现及对铷蒸气激光器影响[J]. 激光与光电子学进展, 2015, 52(3): 031402. Zuo Lei, Hua Weihong, Yang Zining, Wang Hongyan, Xu Xiaojun. Realization of Narrow Linewidth 776 nm Laser and Its Impact on Rubidium Vapor Lasers[J]. Laser & Optoelectronics Progress, 2015, 52(3): 031402.