激光与光电子学进展, 2015, 52 (4): 041601, 网络出版: 2015-02-15
单晶硅太阳电池防电势诱导衰减镀膜工艺分析 下载: 797次
Analysis of Mono-Crystalline Silicon Solar Cells Preventing PID Coating Process
光电子学 电势诱导衰减 SiNx减反射膜 单晶硅太阳电池 转换效率 optoelectronics potential induced degradation silicon nitride anti-reflection coating monocrystalline solar cell conversion efficiency
摘要
电势诱导衰减(PID)能够导致光伏组件功率在较短时间内出现大幅衰退,而PID 现象的产生主要和封装材料及太阳电池表面处理等方面有关。针对太阳电池片的镀膜工艺设计实验,测试并分析了正常工艺和防PID 工艺制作的SiNx减反射膜厚度、折射率、反射率、镀膜前后的少子寿命以及单晶硅成品电池片的电学特性。结果表明,相比标准工艺,虽然防PID 工艺制作的单晶硅太阳电池具有较好的钝化效果,但在整个光谱相应范围减反射效果较差是导致转化效率较低的主要原因。电致发光测试表明,防PID 工艺并没有给单晶硅太阳电池带来额外的缺陷,但是防PID 工艺制作的太阳电池在组件应用时却具有抵抗PID 现象及防止金属离子对电池产生破坏的能力。
Abstract
Power loss is observed in photovoltaic modules resulting from the potential induced degradation (PID), which is mainly related with packaging glasses, glue film and surface treatment of solar cell. The coating process of solar cell to design the experiment is focused on. Thickness, refractive index, reflectance, minority carrier lifetime of the pre and post coating of silicon nitride (SiNx) anti- reflection coatings of machining standard process and preventing PID process and electrical characteristics of the solar cell are tested and analyzed. The results show that the PID process of mono-crystalline silicon solar cells have good passivation effect, but the anti-reflection effect of the poor is the main cause lead to the low conversion efficiency in the whole spectral range. Electro luminescence defect tests show that the preventing PID process does not bring additional defects to the mono-crystalline silicon solar cell, but solar cells are made by the preventing PID process when it is applied in modules have a resisting potential induced degradation phenomenon and preventing damage to solar cells from metal ion, compared with the standard process.
马新尖, 林涛, 冯帅臣. 单晶硅太阳电池防电势诱导衰减镀膜工艺分析[J]. 激光与光电子学进展, 2015, 52(4): 041601. Ma Xinjian, Lin Tao, Feng Shuaichen. Analysis of Mono-Crystalline Silicon Solar Cells Preventing PID Coating Process[J]. Laser & Optoelectronics Progress, 2015, 52(4): 041601.