Chinese Optics Letters, 2015, 13 (2): 021301, Published Online: Sep. 25, 2018  

Study of selectively buried ion-exchange glass waveguides using backside masking Download: 1234次

Author Affiliations
1 Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou 310027, China
2 Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China
Abstract
In this Letter, we study the characteristics of a selectively buried glass waveguide that is fabricated by the backside masking method. The results show that the surface region appears when the width of the backside mask is larger than 7 mm. Here, the glass substrate is 1.5 mm thick. It is also found that the buried depth evolution of the transition region remains almost unchanged and is independent of the width of the backside mask. The loss of the transition region is only 0.28 dB at the wavelength of 1.55 μm if the surface condition is good enough.

Chongyang Pei, Gencheng Wang, Bing Yang, Longzhi Yang, Yinlei Hao, Xiaoqing Jiang, Jianyi Yang. Study of selectively buried ion-exchange glass waveguides using backside masking[J]. Chinese Optics Letters, 2015, 13(2): 021301.

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