红外技术, 2015, 37 (2): 105, 网络出版: 2015-03-23
分子束外延锗基碲镉汞薄膜原位砷掺杂研究
Research on In-situ As-doped HgCdTe Thin Film Growth on Ge-base by MBE
摘要
报道了基于Ge衬底分子束外延碲镉汞原位As掺杂材料的研究结果,进行了As掺杂碲镉汞薄膜生长的温度控制研究;分析了As束流对材料晶体质量的影响,结合 SIMS测试技术得到了 As杂质掺杂浓度与束源炉加热温度的关系;并利用傅里叶红外光谱仪、 X射线双晶衍射、EPD检测等手段对晶体质量进行了分析表征,结果显示利用 MBE方法可以生长出晶体质量良好、缺陷密度低的碲镉汞薄膜;进一步研究了 As杂质的激活退火工艺及不同退火条件对材料电学参数的影响.
Abstract
This paper reports the result of in-situ As-doped HgCdTe thin film growth on Ge-base by MBE. It mainly reseaches on controlling the temperature of As-doped HgCdTe thin film, and analyzes the relationship between the crystal quality and the As-flux. It has been achieved the relationship between the temperatures of effusion cells and impurity concentration which was analyzed by SIMS; FTIR, X-ray and EPD are used to character the quality of the crystal, and the result shows that the HgCdTe thin film with good crystal quality and low defect density could be grown by MBE; More efforts were carried on the existing annealing of As-impurity, as well as the electronic parameters with different annealing temperatures.
覃钢, 李东升, 李艳辉, 杨春章, 周旭昌, 张阳, 谭英, 左大凡, 齐航. 分子束外延锗基碲镉汞薄膜原位砷掺杂研究[J]. 红外技术, 2015, 37(2): 105. QIN Gang, LI Dong-sheng, LI Yan-hui, YANG Chun-zhang, ZHOU Xu-chang, ZHANG Yang, TAN Ying, ZUO Da-fan, QI Hang. Research on In-situ As-doped HgCdTe Thin Film Growth on Ge-base by MBE[J]. Infrared Technology, 2015, 37(2): 105.