红外与毫米波学报, 2015, 34 (1): 10, 网络出版: 2015-03-23   

高功率808nm AlGaAs/GaAs基半导体激光器巴条的热耦合特征

Thermal crosstalk characteristics in high-power 808nm AlGaAs/GaAs laser diode bars
作者单位
北京南瑞智芯微电子科技有限公司, 北京 100192
摘要
利用红外热成像技术和有限元方法在实验和理论上研究了高功率808nm半导体激光器巴条热耦合特征, 给出了稳态和瞬态热分析, 呈现了详细的激光器巴条热耦合轮廓.发现器件稳态温升随工作电流呈对数增加, 热耦合也随之增加且主要发生在芯片级.另外, 作者利用热阻并联模型解释了芯片级热时间常数随工作电流减小的现象.
Abstract
The thermal crosstalk characteristics in high-power 808 nm AlGaAs/GaAs laser diode bar were investigated experimentally and theoretically using infrared thermography and finite element method. We have performed the steady-state and transient analysis. A detailed profile of thermal crosstalk in laser diode bar was presented in this paper. The steady-state temperature rise has a logarithmical dependence on the total operation current, and the thermal crosstalk between emitters increases with the current density. Furthermore, the transient thermal analysis suggested that the thermal crosstalk occurred mainly in chip. Using thermal resistance parallel connection model, we explained the phenomena that the time constant of chip decreased with the increase of total operation current.

乔彦彬, 陈燕宁, 赵东艳, 张海峰. 高功率808nm AlGaAs/GaAs基半导体激光器巴条的热耦合特征[J]. 红外与毫米波学报, 2015, 34(1): 10. QIAO Yan-Bin, CHEN Yan-Ning, ZHAO Dong-Yan, ZHANG Hai-Feng. Thermal crosstalk characteristics in high-power 808nm AlGaAs/GaAs laser diode bars[J]. Journal of Infrared and Millimeter Waves, 2015, 34(1): 10.

本文已被 2 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!