Chinese Optics Letters, 2015, 13 (3): 031401, Published Online: Sep. 25, 2018  

Metamorphic growth of 1.55  μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

Author Affiliations
1 Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT); State Key Laboratory of Information Photonics and Optical Communications (BUPT), Beijing 100876, China
2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract
We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells (MQWs) laser at 1.55 μm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high-quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave (QCW) condition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is 1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA.

小波 李, 永清 黄, 俊 王, 晓峰 段, 瑞康 张, 弘 李业, 正 刘, 琦 王, 霞 张, 晓敏 任. Metamorphic growth of 1.55  μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates[J]. Chinese Optics Letters, 2015, 13(3): 031401.

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