采用多量子阱掩埋条形(BRS)增益芯片和拉锥光纤布拉格光栅(FBG)，制作了1.5 μm 波段FBG 外腔式窄线宽半导体激光器。封装后器件实现了全电流范围内稳定单模窄线宽激光输出。30~250 mA 驱动电流下线宽小于15.48 kHz，实测最小线宽为6.42 kHz，频率稳定度为7.2×10-8/s，边模抑制比大于40 dB，最大出纤功率大于10 mW。这种集成窄线宽激光器性能优异，且制作成本低，工艺简单，适于批量生产，可应用于400 Gb/s相干通信系统的发射源与接收机本振源。

A buried ridge stripe (BRS) gain chip integrated with a fiber Bragg grating external cavity is fabricated for stable, single mode narrow-linewidth semiconductor laser with wavelength of 1.5 μm. The laser can realize single longitudinal mode output with the side-mode suppression ratio over 40 dB in the bias current tuning from 30 mA to 250 mA. The largest output power from fiber pigtail is larger than 10 mW. In the current tuning range, the linewidth is below 15.48 kHz and a minimum linewidth of 6.75 kHz is achieved. By using the beating-frequency method, the measured frequency fluctuation is 7.2×10-8/s. This compact and low cost narrow linewidth laser can be used as the optical source and the local oscillation source in the future 400 Gb/s communication systems.