采用高温固相法合成出La2Mo2O9∶Eu3+,W6+系列红色荧光粉,其结构为立方晶系的β- La2Mo2O9.在395 nm光激发下,样品La1.40Mo2O9∶0.60Eu3+发射出很强的红光,最强发射峰位于616 nm处.适量地掺杂W6+离子可以提高样品的激发和发射强度,在395 nm光激发下,La1.40Mo1.84O9∶0.60Eu3+,0.16W6+荧光粉的Eu3+的5D0→7F2跃迁发射强度最大,是样品La1.40Mo2O9∶0.60Eu3+的1.23倍.最后,将La1.40Eu0.60Mo1.84O9∶0.16W6+荧光粉与~395 nm发射的InGaN芯片一起制作成红光发光二极管(LED),该LED发射出很强的红光.

Red-emitting phosphors La2Mo2O9∶Eu3+ and La2Mo2O9∶Eu3+,W6+ were synthesized by the conventional solid state method.The structure and luminescent properties of these phosphors were investigated.The results indicate that these phosphors are of single phases with cubic crystal structure.La2Mo2O9∶Eu3+ and La2Mo2O9∶Eu3+,W6+ can be efficiently excited by near ultraviolet light,and the strongest excitation peak is at 395 nm.The emission intensity of La2Mo2O9∶Eu3+ can be enhanced by introducing W6+ ions.La1.40Eu0.60Mo1.84O9∶0.16W6+ exhibites the strongest red emission,which is about 1.23 times than that of La1.40Mo2O9∶0.60Eu3+.The red light emitting diode (LED) was fabricated by coating InGaN chip (~395 nm emission) with the phosphor La1.40Eu0.60Mo1.84O9∶0.16W6+,and red bright light could be observed from the LED.Hence La1.40Eu0.60Mo1.84O9∶0.16W6+ maybe find application on near-UV InGaN-based white LEDs.