在用532 nm连续激光辐照TCD-1200D型线阵CCD的过程中，发现了光斑的全饱和单侧拖尾现象。为了分析这种现象的特性，实验测量了拖尾长度随激光功率、CCD积分时间和CCD驱动频率的关系，发现拖尾长度随着激光功率和积分时间的增加而增加，但在一定范围内与CCD驱动频率无关。通过理论计算和实验数据分析拟合发现，拖尾长度和激光功率密度和积分时间的乘积有关，并根据激光辐照下CCD器件光生电荷量的产生过程，推导出了拖尾长度与CCD势阱光生电荷量的关系，得到了拖尾长度随光生电荷量的变化曲线，为全饱和单侧拖尾现象机理分析提供了数据支持。

In the experiment of 532 nm CW laser irradiating linear CCD camera, we found the entirely saturated unilateral smear phenomenon which is different from the smear phenomenon described previously. In order to analyze the characteristics of the entirely saturated unilateral smear, the relationships of the smear length with laser power, integral time and drive frequency were measured in experiment. The smear length was found to increase along with the increase of laser power and integral time, but was independent with the drive frequency. This relationship was consistent with that of electric charge collecting quantity with laser power density and integral time. Through calculating in theory and measuring in experiment, we found that the smear length was related with the product of laser power density and integral time, and the relation expression of smear length and electric charge collecting quantity was educed. These analyses could provide a data basis to the mechanism of the entirely saturated unilateral smear phenomenon.