通过仿真优化探测器的结构参数和性能, 设计了基于0.25 μm标准BCD (Biplor,CMOS and DMOS)工艺的大面积多叉指状PIN光电探测器.选择已优化的大面积光电探测器用于和跨阻放大器以及后端放大器单片集成, 采用0.25 μm BCD工艺实现了一个用于650 nm塑料光纤通信的单片集成光接收芯片.结果表明: 多叉指状PIN光电探测器对650 nm入射光的响应度提高至0.260 A/W, 其结电容降低至4.39 pF.对于650 nm的入射光, 在速率250 Mb/s、误码率小于10-9的条件下, 光接收芯片的灵敏度为-23.3 dBm, 并得到清晰的眼图.该光电探测器可用于宽带接入网中的高速塑料光纤通信系统的光接收芯片中.

Multi-finger PIN photodetector was designed and optimized in a standard 0.25 μm BCD (Bipolar,CMOS and DMOS) process.The optimized large-area multi-finger structure PIN photodetector was applied in the monolithic optoelectronic receiver with a trans-impedance amplifier and a pre-amplifier.Based on simulation and test results,it is shown that 650nm responsibility of PIN photodetector is improved up to 0.260 A/W and the junction capacitance is decreased down to 4.39pF for the multi-finger structure.The receiver achieves a sensitivity of -23.3 dBm with the bit-error-rate of 10-9 at 250 Mb/s at 650 nm.A clear eye diagram of the proposed receiver is demonstrated for 250 Mb/s.Results indicate that the monolithic optical receiver can be applied to 250 Mb/s plastic optical fiber communication.