红外技术, 2015, 37 (4): 319, 网络出版: 2015-04-28
原位氧化硅钝化层对氧化钒薄膜光电特性的影响
The Photoelectrical Properties of VOx Film by As-deposited SiOx Dielectric Layer
离子束溅射沉积 SiOx/VOx 双层膜 残余气体分析仪(RGA) 电阻温度系数(TCR) ion beam sputter deposition SiOx/VOx film stack residual gas analyser temperature coefficient of resistance
摘要
氧化硅(SiOx)原位钝化层对氧化钒(VOx)薄膜电学特性的影响分析旨在改善像元微桥结构的光学吸收特性,提高热敏VOx 薄膜层的方阻和电阻温度系数(TCR)稳定性.采用离子束溅射沉积50 nm VOx 薄膜后,紧接着沉积30 nm SiOx 钝化层.通过原位残余气体分析仪(RGA)和衬底温度控制,调节氧化钒薄膜中的氧含量,分析了VOx 单层膜、SiOx/VOx 双层膜的电学特性随工艺温度的变化规律,原位残余气体分析仪(RGA)和150℃加温工艺提高了VOx 热敏层薄膜的方阻和电阻温度系数稳定性.
Abstract
The photoelectrical properties of VOx film by as-deposited SiOx dielectric layer is proposed to enhance infrared ray absorption coefficient of pixel microbridge,and improves quare resistance and TCR stability of VOx active film.In this paper,we prepare a series of 50nm VOx films by ion beam sputter deposition and then 30 nm SiOx film sare deposited.We bring in RGA and temperature condition as technical parameters to adjust Oxygenic content of VOx films,and test electrical properties of VOx film and SiOx/VOx film stack,which improves square resistance and TCR stability of VOx active film.
孔令德, 方辉, 魏虹, 刘礼, 周润生, 铁筱滢, 杨文运, 姬荣斌. 原位氧化硅钝化层对氧化钒薄膜光电特性的影响[J]. 红外技术, 2015, 37(4): 319. KONG Ling-de, FANG Hui, WEI Hong, LIU Li, ZHOU Ruan-sheng, TIE Xiao-ying1, YANG Wen-yun, JI Rong-bin. The Photoelectrical Properties of VOx Film by As-deposited SiOx Dielectric Layer[J]. Infrared Technology, 2015, 37(4): 319.
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