硅基MEMS红外光源作为红外应用系统的核心部件,其光学辐射特性直接影响着整个红外装置的性能,然而,国内外对于硅基MEMS 红外光源的辐射特性尤其是辐射光谱特性未见详细报道,因此,为确定硅基MEMS 红外光源的辐射光谱分布,对MEMS 红外光源光谱特性进行准确测试是非常必要的.实验采用OL(Optronic Laboratories)系列光谱测量系统对MEMS 红外光源进行光谱特性测试,相对辐射光谱测试结果显示该光源的红外光谱波段主要分布在3～5 ?m,中心波长在3.6 ?m 处,其大气透过率接近90%,具有很好的大气透射度.

As a core component of infrared applications,the optical radiation characteristics of Silicon MEMS infrared source directly affects the performance of the infrared devices,however,there was not detailed report for the radiation characteristics of silicon MEMS infrared source radiated spectral characteristics at home and abroad.Therefore,to determine the radiation spectrum of a silicon MEMS infrared source distribution,the accurate testing for spectral characteristics of the MEMS infrared source is necessary.MEMS infrared source spectral characteristics are tested by using OL (Optronic Laboratories)series spectrum measurement system.The results show that the relative radiation spectrum infrared spectral band of the source is mainly distributed in 3～5 ?m,and the center wavelength is at 3.6μm and its atmospheric transmittance is nearly 90 percent with a good transmittance of the atmosphere.