采用射频磁控溅射技术在Si(111)衬底上制备了多组分ZnO 基陶瓷薄膜，利用Nd∶YAG 激光器对多组分ZnO基陶瓷薄膜进行了激光冲击处理，研究了激光冲击处理对多组分ZnO 基陶瓷薄膜压敏电性能的影响。结果表明，激光冲击处理后，薄膜的晶粒尺寸显著减小，表面更加平整致密。薄膜的压敏电性能得到了不同程度的改善，其中非线性系数的提高幅度最大为65.2%，压敏电压降低幅度最大为38.92%，漏电流密度降低幅度最大为30.51%。薄膜中晶粒细化，晶格畸变加强，晶界处的界面态密度激增，导致薄膜非线性系数激增，从而有效改善了多组分ZnO基陶瓷薄膜的压敏电性能。

ZnO-based ceramic films are deposited on Si (111) substrates by radio frequency magnetron sputtering technique, and the films are shocked by the Nd∶YAG laser. The effect of laser shock on the electrical property of ZnO-based ceramic films is investigated. The results show that after laser shock processing, the films′ grain size is reduced significantly and the surface are more smooth and compact. The electrical properties of films have been improved in varying degrees. The nonlinear coefficient is largest raised by 65.2%，the breakdown voltage is largest decreased by 38.92%, the leakage current density is largest decreased by 24.4%. After the laser shock processing, with the grain refinement and lattice distortion, the interface-state density is sharply increased, which leads to the improvement of the nonlinear coefficient. Therefore the electrical property of ZnO-based ceramic films is excellent.