红外与毫米波学报, 2015, 34 (2): 166, 网络出版: 2015-05-20
InAs/GaSb二类超晶格红外探测器的瞬态光伏响应特性
Transient photovoltaic responses in InAs/GaSb type-Ⅱ superlattice infrared photodetectors
摘要
报道了InAs/GaSb二类超晶格红外探测器的瞬态光伏响应特性.通过对p-b-i-n二类超晶格探测器对皮秒脉冲激发的瞬态响应特性的分析及拟合, 获得了器件的表观少数载流子的寿命.并对不同尺寸台面结构单元器件进行测试分析, 发现少数载流子寿命随着台面面积的增大而增大, 归结为由于侧壁表面效应带来的影响.所测器件的少数载流子为空穴, 其表观寿命约为2~12ns.
Abstract
The transient photovoltaic responses in InAs/GaSb type-Ⅱ superlattice infrared photodetectors under picosecond pulsed laser illumination are reported. By analyzing the dynamic processes in the transient response curves of the p-b-i-n structured type-Ⅱ superlattice detectors, the apparent carrier lifetime can be obtained. A series of single element devices with different mesa areas have been investigated. The minority carrier lifetime trends to increase as the mesa area increases, implying a reduced surface recombination resulted from the un-passivated side-walls of the mesa. The investigated minority carriers are attributed to holes, with the apparent lifetime in the range 2-12ns.
黄亮, 李志锋, 周易, 陈建新, 陆卫. InAs/GaSb二类超晶格红外探测器的瞬态光伏响应特性[J]. 红外与毫米波学报, 2015, 34(2): 166. HUANG Liang, LI Zhi-Feng, ZHOU Yi, CHEN Jian-Xin, LU Wei. Transient photovoltaic responses in InAs/GaSb type-Ⅱ superlattice infrared photodetectors[J]. Journal of Infrared and Millimeter Waves, 2015, 34(2): 166.