极紫外光刻技术(EUVL)利用波长为13.5 nm 的极紫外(EUV)光源，可以轻松突破30 nm 技术节点而实现大规模工业生产。毛细管放电直接将电能转换成等离子体的极紫外辐射能，具有较高的能量转换效率。毛细管放电三束等离子体极紫外耦合光源利用激光等离子体(LPP)的热膨胀力与三束等离子体所受的洛仑兹力相互作用，耦合出较大面积的极紫外辐射区，从而在满足用光要求的前提下大幅度地降低毛细管放电的重复频率，有利于光刻生产。在实现三对电极同时放电以及放电与激光同步触发的基础上，探讨了激光对耦合光源所起的作用。实验发现位置耦合对极紫外光源的影响很小，激光等离子体引起的动力耦合成为问题的关键，有待于逐步解决。

Extreme ultraviolet lithography (EUVL) technology that harnesses extreme ultraviolet (EUV) source with wavelength of 13.5 nm can easily break through the technology node of 30 nm thus realize large-scale industrial production. Capillary discharge that directly converts electric power into EUV radiation power of the plasma has a higher conversion efficiency of energy. A coupled EUV source from three plasmas in capillary discharge, by making use of the interaction of the thermal expansion of laser produced plasma (LPP) with the Lorentz force received by three plasmas, produces a larger area of EUV radiation. Therefore, it greatly reduces the repetition rate of capillary discharge under the premise of the requirement for EUV utilization which is favorable for lithography production. On the basis of realizing concurrent discharge of three pairs of electrode and synchronized ignition of discharge with laser, the effect of laser on the coupled source is discussed. It is found from experiment that the positional coupling has so little influence on EUV source that the dynamical coupling caused by LPP becomes the key to the problem to be solved gradually.