发光学报, 2015, 36 (5): 552, 网络出版: 2015-05-20
楔形瓣状结构对正向注入型Si-LED发光特性的影响
Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process
硅基发光二极管 正向注入 楔形结构 标准CMOS工艺 Si-based light emitting diode forward-injection wedge configuration standard CMOS technology
摘要
基于标准CMOS工艺的p+源/漏区和n阱, 设计了两种楔形瓣状结构的正向注入型硅基发光二极管(Si-LED), 采用UMC 0.18 μm 1P6M CMOS工艺设计制备。测试结果表明, 正向注入型p+/n-well二极管的发射波长位于近红外波段, 峰值波长在1 130 nm附近, 且工作电压小于2 V, 与标准CMOS电路兼容。其中, 八瓣结构的Si-LED (TS2)在200 mA时的发光功率可达1 200 nW, 且未出现饱和, 而注入电流为40 mA时的最大功率转换效率达5.8×10-6, 约为四瓣结构器件(TS1)的2倍。所研制的Si-LED具有工作电压低、转换效率高等优点, 有望在光互连领域得到应用。
Abstract
Based on p+ source/drain region and n-well of standard CMOS technology, two forward-injection-type Si-LEDs with different petaloid configuration were designed and fabricated by UMC 0.18 μm 1P6M CMOS process. The measurement results indicate that the emission spectra of both Si-LEDs locate at near-IR region with peak wavelength around 1 130 nm, and the devices can operate properly below 2 V. When the device TS2 with eight-petal configuration is forward-biased at 200 mA, its optical power increases to 1 200 nW without saturation, and the maximum power conversion efficiency reaches up to 5.8×10-6 at the current of 40 mA, which is almost double that of the device TS1 with four-petal. Due to the features of low operating voltage and high conversion efficiency, the device TS2 is highly attractive for future optoelectronic applications.
崔猛, 谢生, 毛陆虹, 郭维廉, 张世林, 武雷, 谢荣. 楔形瓣状结构对正向注入型Si-LED发光特性的影响[J]. 发光学报, 2015, 36(5): 552. CUI Meng, XIE Sheng, MAO Lu-hong, GUO Wei-lian, ZHANG Shi-lin, WU Lei, XIE Rong. Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process[J]. Chinese Journal of Luminescence, 2015, 36(5): 552.