针对亚毫米波混频二极管管对电路模型不够精确的问题, 采用场路结合协同分析, 将进出二极管的频率信号分类处理, 建立了一种应用于亚毫米波分谐波混频器电路的反向并联二极管对精确电路模型。基于获取的管对精确电路模型, 建立了全局性的分谐波混频器电路的集总元件等效电路模型, 设计并实现了一款183 GHz分谐波混频器。测试结果表明混频器在本振频率为92 GHz、功率为2 mW, 射频频率176～192 GHz范围内, 双边带变频损耗小于6.8 dB, 等效噪声温度小于800 K, 在182 GHz测得最小双边带变频损耗为4.9 dB, 与仿真数据吻合较好。

To minimize the inaccuracy of Schottky diode pair circuit model for sub-millimeter wave band mixer, full-wave analysis and circuit simulation were carried out to classify the signals in and out of diodes. Then a more precise modeling of the anti-parallel diode pair was proposed and applied to the circuits of sub-millimeter wave sub-harmonic mixers. To enhance the efficiency of simulation and optimization, a globally lumped element equivalent circuit of the mixer has been built based on the accurate diode model. A 183 GHz sub-harmonic mixer was designed and fabricated. The mixer exhibited less than 6.8 dB double side-band conversion loss and a mixer temperature of lower than 800 K over an RF band of 176-192 GHz using 2 mW of local oscillator power at 92 GHz. A minimum double side-band mixer conversion loss of 4.9 dB was measured at 182 GHz. The measured results agree well with the simulated ones.