为充分了解用于金刚石放大光阴极电子枪中的金刚石薄膜对初级电子束流强的放大特性及与其他因素的关系, 利用VSIM软件的PIC模块对金刚石放大电子束流强的物理特性进行了数值模拟, 结果给出了电子束流强的最大放大倍数与初级电子束能量、金刚石薄膜内部场强及金刚石薄膜厚度等因素的定量关系。模拟结果显示, 选择合适的初级电子束能量和金刚石薄膜内部场强, 电子束流强的最大放大倍数可以达到两个数量级。

In order to fully understand the electron beam current amplification characteristic in diamond used in the diamond amplified photocathode as well as the relationship with other factors, a PIC module of VSIM was used to simulate the amplification characteristic of the electron beam current in diamond. The relationships among the secondary electron yield and the energy of the primary electrons, the internal field in diamond, the diamond film thickness and some other factors were obtained from the simulation results. The secondary electron yield could reach two orders of magnitude when appropriate primary electrons energy and internal field in diamond film were chosen.