采用X 射线光电子能谱(XPS)分析了单层和双层SiNx 膜中的化学键、N/Si 比及Si、N、C、O 原子百分比，进一步验证了等离子体增强化学气相沉积法沉积单层和双层SiNx膜对单晶硅太阳电池电学性能的影响。XPS、反射率及少子寿命的分析表明，NH3和SiH4在单晶硅表面生成了含有H 的SiNx薄膜，双层SiNx外层膜的N/Si 比略高于单层膜，起到了更好的减反射效果，内层膜比单层膜富Si，起到了更好的钝化效果。电学测试结果表明，相比单层SiNx膜单晶硅太阳电池，双层SiNx膜单晶硅太阳电池开路电压提高了2 mV、短路电流提高了47 mA、转化效率提高了0.17%。

Chemical bond in single-layer and double-layer SiNx film, N/Si ratio and atomic percentage of Si、N、C、O are analyzed by X-ray photoelectron spectroscopy (XPS) in this paper. The impact of single-layer and double-layer SiNx film deposited by plasma enhanced chemical vapor deposition (PECVD) on mono-crystalline silicon solar cells electrical characteristic is verified. Analyses of XPS、reflectivity and minority carrier lifetime show that the film of SiNx with H atoms is generated on the mono-crystalline surface through NH3 and SiH4. The N/Si ratio of outer film of double-layer SiNx is slightly higher than that of single-layer SiNx, which play the better effect on anti-reflection. And the internal film had a better passivition effect than single-layer film because of richer Si. The electrical characteristic test shows that, comparing with single-layer SiNx film solar cell, open circuit voltage, short circuit current and photoelectric conversion efficiency of double-layer SiNx film solar cell improve by 2 mV, 47 mA and 0.17% respectively.