红外, 2015, 36 (5): 8, 网络出版: 2015-05-26
CZT晶体用化学机械抛光液的制备及其性能研究
Research on Chemical-mechanical Planarization Slurry of CdZnTe
摘要
化学机械抛光工艺是碲锌镉(Cadmium Zinc Telluride, CZT)晶体表面处理的关键技术之一。其中, 化学机械抛光液是影响晶片表面质量的重要因素。目前用于CZT晶片的抛光液主 要是依靠进口的碱性抛光液, 这严重制约了我国CZT晶体研究的发展。采用硅溶胶和次 氯酸钠(NaClO)溶液作为主要原料, 制备了碱性化学机械抛光液。然后采用该抛光液对CZT晶 片表面进行了化学机械抛光, 并对抛光表面进行了表征。实验结果表明, 抛光后晶片表 面的粗糙度小于2 nm, 因此采用硅溶胶-次氯酸钠碱性抛光液可制备出高质量的CZT抛光表面。
Abstract
Chemical-mechanical polishing is one of the key surface treatment processes for CdZnTe crystal. The chemical-mechanical slurry is an important factor affecting the surface quality of CdZnTe wafers. At present, most of the polishing slurry for CdZnTe wafers in our country is imported from foreign countries. This has greatly hampered the development of CdZnTe crystals of our country. In this paper, the alkaline chemical-mechanical slurry is prepared by using silica solution and NaClO as the main raw materials. Then, the slurry is used to polish the surface of CdZnTe wafers. The characterization result shows that the polished surface has its roughness less than 2 nm and the slurry can be used to treat the surface of CdZnTe wafers with high quality.
敖孟寒, 朱丽慧, 孙士文, 虞慧娴. CZT晶体用化学机械抛光液的制备及其性能研究[J]. 红外, 2015, 36(5): 8. AO Meng-han, ZHU Li-hui, SUN Shi-wen, YU Hui-xian. Research on Chemical-mechanical Planarization Slurry of CdZnTe[J]. INFRARED, 2015, 36(5): 8.