采用分光椭偏（SE）测试技术研究晶体硅（c-Si）异质结太阳电池用氢化非晶硅（a-Si:H）薄膜钝化层的性能。采用有效媒介理论为基础进行分层多相拟合，研究了a-Si:H/c-Si界面层内部的缺陷散射周期（St）、a-Si:H 体内孔隙率以及薄膜介电函数峰值随基底温度的变化规律。通过与傅里叶红外转换光谱计算得到的微结构数据对比，发现界面层的St与薄膜内部SiH 和SiH2含量相关。依据高分辨率透射电镜(TEM)下呈现的形貌特征、有效少子寿命和异质结的implied 开路电压等参数的辅助证明，确定SE 技术作为一种有效的光学表征手段，能准确快速地判断a-Si:H对c-Si表面的钝化性能，继而定量给出适合晶体硅异质结太阳电池高质量a-Si:H 钝化层生长的最优参数。

The properties of hydrogenated amorphous silicon (a-Si:H) thin layer are studied by spectroscopic ellipsometry (SE) measurement for the surface passivation of crystalline silicon (c- Si) in heterojunction solar cell. The scatter interval (St) of defect at the a-Si:H/c-Si interface, concentration of micro voids and maximum value of dielectric function of a- Si:H layers deposite at different substrate temperatures (Ts) are analyzed by fitting with multilayer mode based on the effective medium approximation. By comprising with the microstructure data calculated from Fourier transform infrared spectroscopy, the correlation between St and the H- bond configurations in a- Si:H layer is obtained. According to the measurement results of transmission electron microscope (TEM), effective minority carrier lifetime and implied open circuit voltage, it is demonstrated that SE technique is an effective characterization tool to estimate the surface passivation quality of a-Si:H for c-Si. Thus, the optimal parameters are quantitatively obtained for the deposition of high quality a-Si:H passivation layer for silicon heterojunction solar cell.