半导体光电, 2015, 36 (1): 20, 网络出版: 2015-06-25
ICPCVD-SiNx对GaN/AlGaN基紫外探测器的钝化效果的研究
Study on the ICPCVD-SiNx Passivation of InGaN Ultraviolet Detector
摘要
采用ICPCVD-SiNx薄膜对GaN/AlGaN基紫外探测器进行钝化, 从薄膜绝缘特性、钝化效果两方面, 对ICPCVD-SiNx、磁控溅射-SiOx、PECVD-SiOx和PECVD-SiNx四种钝化膜进行对比。制作了钝化膜/GaN MIS器件, 通过测试MIS器件漏电流密度和薄膜击穿电场的大小表征薄膜绝缘性能, 结果表明ICPCVD-SiNx对应的MIS器件的漏电特性最好, 外加偏压为100V时, 其漏电流密度保持在1×10-7A/cm2以下, 薄膜击穿电场大于3.3MV/cm。采用不同钝化方法制作了p-i-n型AlGaN基紫外探测器, 通过计算钝化前后器件暗电流的变化, 表征不同钝化方法的钝化效果。结果表明ICPCVD-SiNx钝化的器件, 其暗电流比其他钝化方法的器件小近两个数量级, 在-5V偏压下暗电流密度为7.52A/cm2。
Abstract
ICPCVD-SiNx was used to passivate GaN/AlGaN ultraviolet photodetectors, the insulativity and passivation effect of ICPCVD-SiNx, magnetron sputtering-SiOx, PECVD-SiOx, PECVD-SiNx films were compared. GaN MIS was fabricated by employing different passivation films, it is shown that the MIS devices passivated by ICPCVD-SiNx film can realize the best insulativity, the leakage current density was lower than 1×10-7A/cm2 when the bias applied reached 100V, the breakdown field was higher than 3.3MV/cm. p-i-n AlGaN photodetectors were fabricated by using different passivation techniques, it was shown that the detectors passivated by ICPCVD-SiNx film have two orders of magnitude higher dark current decreasement compared with other passivation methods. The dark current is 7.52A/cm2 when the applied bias is -5V.
刘秀娟, 张燕, 李向阳. ICPCVD-SiNx对GaN/AlGaN基紫外探测器的钝化效果的研究[J]. 半导体光电, 2015, 36(1): 20. LIU Xiujuan, ZHANG Yan, LI Xiangyang. Study on the ICPCVD-SiNx Passivation of InGaN Ultraviolet Detector[J]. Semiconductor Optoelectronics, 2015, 36(1): 20.