半导体光电, 2015, 36 (1): 59, 网络出版: 2015-06-25
高场效应迁移率铁电栅二氧化锡薄膜晶体管的研究
Study on Ferroelectric-gate Thin-film Transistor Using Tin Oxide Channel with High Field Effect Mobility
溶胶-凝胶 薄膜晶体管 BNT铁电薄膜 二氧化锡 高场效应迁移率 sol-gel thin film transistor BNT ferroelectric thin film SnO2 high field-effect mobility
摘要
采用溶胶-凝胶法(Sol-Gel)制备了以n型Si为栅极、二氧化锡(SnO2)薄膜为沟道层、(Bi,Nd)4Ti3O12(BNT)薄膜为绝缘层的薄膜晶体管。晶体管呈现出n沟道增强型性能, 其开态电流Ion=25μA, 场效应迁移率μsat=0.3cm2·V-1·s-1。BNT铁电薄膜的自发极化以及载流子与极化的耦合作用是晶体管具有较大开态电流和较高场效应迁移率的主要原因。
Abstract
The ferroelectric-gate thin-film transistors with n-type Si and tin oxide (SnO2) as the channel and ferroelectric (Bi,Nd)4Ti3O12 (BNT) as the gate insulator were fabricated by sol-gel technique. The transistors exhibit n-type transistor characteristics operating in an enhancement-mode with the “on” current of 25μA and a field-effect mobility of 0.3cm2·V-1·s-1. The spontaneous polarization of the BNT ferroelectric thin film and the coupling between polarization of BNT and charge carrier of SnO2 are the main reasons for the large “on” current and high field effect mobility.
贾良华, 王金斌, 钟向丽, 吕旦, 宋宏甲, 李波. 高场效应迁移率铁电栅二氧化锡薄膜晶体管的研究[J]. 半导体光电, 2015, 36(1): 59. JIA Lianghua, WANG Jinbin, ZHONG Xiangli, LV Dan, SONG Hongjia, LI Bo. Study on Ferroelectric-gate Thin-film Transistor Using Tin Oxide Channel with High Field Effect Mobility[J]. Semiconductor Optoelectronics, 2015, 36(1): 59.
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