半导体光电, 2015, 36 (2): 182, 网络出版: 2015-06-25  

基于游标干涉的新型高灵敏度微环传感器

Novel Highly Sensitive Microring Sensor Based on Vernier-interference
作者单位
中国科学院半导体研究所 集成光电子国家重点实验室, 北京 100083
摘要
设计并分析了一种基于游标效应的光学传感器。采用截面尺寸为220nm×500nm的SOI矩形波导来进行分析。传感器的灵敏度为4.5×104nm/RIU, 探测极限低于10-4RIU。该传感器最重要的优点是, 即使器件有很高的传输损耗和低的Q因子, 仍有很高的灵敏度和低的探测极限。分析了热光效应对基于游标效应传感器的影响。分析结果也同样适用于其他基于游标效应的传感器。
Abstract
In this paper, designed and analyzed is an optical sensor based on Vernier effect. Rectangular waveguide with the dimension of 220nm×500nm based on silicon-on-insulator (SOI) is chosen to make analysis. Its sensitivity is 4.5×104nm/RIU and the detection limit is less than 10-4RIU. The most important virtue is that even if the device has a high loss and a low Q-factor, it has an ultrahigh sensitivity and a low detection limit. The influence of thermo-optic (TO) effect on the optical sensor is analyzed distinctly. The result is also suitable to other sensors based on Vernier effect.

张晓光, 吴远大, 王玥, 安俊明, 张家顺, 谢亮, 胡雄伟. 基于游标干涉的新型高灵敏度微环传感器[J]. 半导体光电, 2015, 36(2): 182. ZHANG Xiaoguang, WU Yuanda, WANG Yue, AN Junming, ZHANG Jiashun, XIE Liang, HU Xiongwei. Novel Highly Sensitive Microring Sensor Based on Vernier-interference[J]. Semiconductor Optoelectronics, 2015, 36(2): 182.

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