半导体光电, 2015, 36 (2): 205, 网络出版: 2015-06-25
2 μm InGaAsSb/AlGaAsSb应变补偿量子阱结构的数值研究
Numerical Study on 2μm InGaAsSb/AlGaAsSb Strain-compensated Quantum Wells
应变补偿 临界厚度 能带结构 增益 阈值电流 InGaAsSb/AlGaAsSb InGaAsSb/AlGaAsSb strain-compensated critical thickness band structure gain threshold current
摘要
为了降低2μm半导体激光器的阈值电流并提高器件的输出功率, 设计了InGaAsSb/AlGaAsSb应变补偿量子阱结构, 并利用SimLastip软件对器件进行了数值模拟。研究表明, 在势垒中适当引入张应变可以改善量子阱的能带结构, 提高对载流子的限制能力。当条宽为120μm、腔长为1000μm时, 采用应变补偿量子阱结构的激光器的阈值电流为91mA, 斜率效率为0.48W/A。与压应变量子阱激光器相比, 器件性能得到明显的改善。
Abstract
In order to reduce the threshold current and improve the output power of 2μm semiconductor lasers, InGaAsSb/AlGaAsSb strain-compensated quantum-well structure was designed and the InGaAsSb/AlGaAsSb lasers were simulated by SimLastip for the first time. The appropriate tensile strain was introduced in barrier to improve the band structure and enhance the confinement of carriers. For the strain-compensated quantum well laser with strip width of 120μm and the cavity length of 1000μm, the threshold current is 91mA and the slope efficiency is 0.48W/A. Compared with the compressive strain quantum well lasers, the properties of strain-compensated quantum well laser are improved significantly.
安宁, 刘国军, 刘超, 李占国, 刘鹏程, 魏志鹏, 方玄, 马晓辉. 2 μm InGaAsSb/AlGaAsSb应变补偿量子阱结构的数值研究[J]. 半导体光电, 2015, 36(2): 205. AN Ning, LIU Guojun, LIU Chao, LI Zhanguo, LIU Pengcheng, WEI Zhipeng, FANG Xuan, MA Xiaohui. Numerical Study on 2μm InGaAsSb/AlGaAsSb Strain-compensated Quantum Wells[J]. Semiconductor Optoelectronics, 2015, 36(2): 205.