半导体光电, 2015, 36 (2): 216, 网络出版: 2015-06-25
SiNx插入层对Si衬底上生长GaN薄膜晶体质量和表面形貌的影响
Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films
摘要
在Si(111)衬底上采用金属有机化合物化学气相沉积(MOCVD)技术外延生长GaN薄膜, 对外延生长所得GaN薄膜的晶体结构和表面形貌进行表征, 并研究SiNx插入层对GaN薄膜的晶体质量和表面形貌的影响。结果表明, 在Si衬底上生长GaN薄膜过程中引入SiNx插入层可使GaN薄膜的(10-12)面的X-射线回摆曲线的半峰宽(FWHM)值从974.01减小到602.01 arcsec; 表面凹坑等缺陷减少、表面平整度提高。可见, SiNx插入层对在Si衬底上外延生长GaN薄膜的晶体质量和表面形貌有着重要的影响。
Abstract
GaN epitaxial films were grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The effects of SiNx interlayer on the crystalline quality and the surface morphology of GaN epitaxial film were investigated. The results reveal that the crystalline quality and the surface smoothness of GaN film can be improved by introducing SiNx interlayer. The full-width at half-maximum (FWHM) value of Rocking Curve scanning along GaN(10-12) is dramatically decreased from 974.01 to 602.01 arcsec, and the pits distributed on the surface are greatly reduced with the growth of SiNx interlayer. Conclusively, the SiNx interlayer has remarkable influence on the crystalline quality and the surface morphology of the GaN films grown on Si substrate.
钱慧荣, 周仕忠, 刘作莲, 杨为家, 王海燕, 林志霆, 林云昊, 王文樑, 李国强. SiNx插入层对Si衬底上生长GaN薄膜晶体质量和表面形貌的影响[J]. 半导体光电, 2015, 36(2): 216. QIAN Huirong, ZHOU Shizhong, LIU Zuolian, YANG Weijia, WANG Haiyan, LIN Zhiting, LIN Yunhao, WANG Wenliang, LI Guoqiang. Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films[J]. Semiconductor Optoelectronics, 2015, 36(2): 216.
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