电位诱导衰减(PID)能够导致晶体硅太阳电池组件功率大幅衰减，使太阳电池组件的大规模应用受到了限制。实验分析了由不同等离子体增强化学气相沉积(PECVD)镀膜工艺多晶硅太阳电池制作的组件功率衰减问题。结果表明，相比标准工艺多晶硅太阳电池组件(折射率为2.06)，防PID 工艺多晶硅太阳电池(折射率为2.16)制作的组件功率仅有1.65%的衰减，衰减幅度在5%以内，具有一定的耐高压、高温和湿热环境的能力。分析可知，在满足光学薄膜厚度的情况下，制作具有较高折射率SiNx膜的多晶硅太阳电池组件能够更好地预防PID 现象的发生。

Potential induced degradation (PID) can lead to a great attenuation in crystalline silicon solar cells module′s power and bring limitation on the large-scale application of solar cells module. The power attenuation problem of module made of different plasma enhanced chemical vapor deposition (PECVD) coating processed polycrystalline silicon solar cells is analyzed experimentally. The results show that compared with the module of standard process polycrystalline silicon solar cells (the refractive index is 2.06), the module made of preventing PID processed polycrystalline silicon solar cells (the refractive index is 2.16) suffers a power attenuation of 1.65% only, which is within the attenuation range of 5%, and has certain abilities of resistance to high pressure, high temperature and humid environment. According to the analysis, under the condition of the certain thickness of optical film, making polycrystalline silicon solar cells module with high refractive index SiNx film can better prevent the happening of the PID phenomenon.