钒的氧化物具有对温度敏感的半导体-金属可逆相变特性.在多种钒氧化合物中,VO2的相变温度点约为68℃,适用于很多应用领域.VO2长期暴露在空气中时,会被氧化.研究了通过制备VO2/Al2O3复合膜系来保持氧化钒薄膜的稳定性的方法.采用TFCalc薄膜设计软件,设计了VO2/Al2O3复合膜系.依据材料的折射率和消光系数,优化了膜系各膜层的厚度,分析了复合膜系的相变特性.采用磁控溅射方式制备了氧化钒薄膜,再通过氧氩混合气氛热处理得到VO2占主要成分的氧化钒薄膜.在氧化钒薄膜上采用射频磁控溅射方法封装了120nm厚的Al2O3膜.利用分光光度计测量分析了膜系的相变特性,Al2O3膜对VO2膜的相变性能影响很小.Al2O3膜适于VO2薄膜的封装.

Vanadium oxides own the characteristic of temperature sensitive semiconductor-to-metal reversible phase transition.Among various V-O materials,VO2 with the phase transition temperature of 68℃ is suitable for many fields.VO2 will be oxided if it is exposed in atmosphere for a long time.A method for keeping the stability of VO2 films was studied by preparing VO2/Al2O3 multi-film.Applying TFCalc film design software,the multi-film system was designed.By setting refractive index and extinction coefficient,the film thickness of every layer was optimized.Then the sputtering method was used to prepare Vanadium oxide films.Oxygen argon mixed gas heat treatment was used to fabricate the films for which VO2 is the main component.Al2O3 film with 120nm thickness was sputtered on the VO2 film.Spectrophotometer was used to analyze the spectrum transmittance performance of the film system.It is indicated that Al2O3 film does little influence on VO2 film’s phase transition performance,and Al2O3 film is suitable for the package of VO2 film.