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基于拓扑绝缘体的Yb:KGW 调Q激光器

Q-Switched Yb:KGW Laser Based on Topological Insulators

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摘要

Yb:KGW 激光晶体可用半导体抽运获得瓦级输出,这是由于其本身具备宽的增益带宽(24 nm),大的激光发射截面(2.8×10-20 cm2),以及良好的热导性能(3.3 W/m·K)。Yb:KGW 调Q 激光器通过透射式新型可饱和吸收材料拓扑绝缘体Bi2Se3实现,获得窄脉宽为1.5 μs, 中心波长1042 nm,对应脉冲能量为4.7 μJ,峰值功率为3.13 W。

Abstract

Yb:KGW laser material is well suited to build diode-pumped pulse lasers in watt region because of its broad gain bandwidth of 24 nm, large emission cross section of 2.8×10- 20 cm2 and good thermal conductivity of 3.3 W/(m·K). A passively Q- switched Yb:KGW laser is obtained using a transmission- type topological insulator Bi2Se3 as a saturable absorber. The achieved maximum pulse energy is 4.7 μJ and the peak power is 3.13 W for a pulse duration of 1.5 μs.

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中图分类号:O436

DOI:10.3788/cjl201542.0802004

责任编辑:宋梅梅  信息反馈

基金项目:国家自然科学基金(61177047)、北京市自然科学基金(1102005)、北京工业大学基础研究基金(X3006111201501)

收稿日期:2015-01-20

修改稿日期:2015-03-01

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刘京徽:北京工业大学应用数理学院, 北京 100124
田金荣:北京工业大学应用数理学院, 北京 100124
胡梦婷:北京工业大学应用数理学院, 北京 100124
窦志远:北京工业大学应用数理学院, 北京 100124
宋晏蓉:北京工业大学应用数理学院, 北京 100124

联系人作者:刘京徽(liujinghui@emails.bjut.edu.cn)

备注:刘京徽(1991—),女,硕士研究生,主要从事固体锁模激光器方面的研究。

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