光学学报, 2015, 35 (s1): s114005, 网络出版: 2015-07-27  

高均匀性半导体激光器堆栈匀化系统

High Homogenization Diode Laser Stack Beam Shaping System
作者单位
1 军械工程学院电子与光学工程系,河北 石家庄 050003
2 装备学院航天指挥系,北京 101416
3 中国科学院重庆绿色智能技术研究院集成光电技术研究中心,重庆 400714
摘要
半导体激光器由于自身波导结构的不对称性导致光强分布不均匀而限制了其在工业加工上的应用,为了对半导体激光光束进行整形以获得均匀光斑,设计了一种基于微透镜阵列的半导体激光器堆栈匀化系统。分析了微透镜阵列对半导体激光匀化的原理,通过微透镜边缘衍射对匀化光斑的影响确定了微透镜孔径范围。采用6bar条半导体激光器堆栈对微透镜阵列光束匀化系统进行了仿真和实验验证,实现了均匀性为92.59%的光斑,能量传输效率为91.19%。该匀化系统在半导体激光焊接、熔覆以及硬化等表面处理中具有很强的实用性。
Abstract
Intensity distribution of diode laser is not uniform due to the broad-area and ridge-waveguide designs, poor beam quality is the limiting factor of industrial applications. In order to achieve homogenized spot by beam shaping of high-power diode laser stack, a homogenization system for diode laser stack based on microlens array is designed. The diode laser beam shaping theory of microlens array is analyzed. The lower limit of clear aperture of microlens is confirmed by analysis of the impact of the diffraction of microlens edge on the spot homogeneity. The simulation and experimental test are carried out for the microlens array beam shaping system by a diode laser stack with 6 bars, realizing the spot with the homogeneity of 92.59% and energy utilization of 91.19%. The beam shaping system can be well used in diode laser welding, cladding, surface hardening and other industrial fields.

雷呈强, 汪岳峰, 殷智勇, 尹韶云, 孙秀辉, 周全. 高均匀性半导体激光器堆栈匀化系统[J]. 光学学报, 2015, 35(s1): s114005. Lei Chengqiang, Wang Yuefeng, Yin Zhiyong, Yin Shaoyun, Sun Xiuhui, Zhou Quan. High Homogenization Diode Laser Stack Beam Shaping System[J]. Acta Optica Sinica, 2015, 35(s1): s114005.

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