利用脉冲激光沉积(PLD)法在玻璃基片上室温生长SnS薄膜, 并在Ar气保护下分别在200, 300, 400, 500, 600 ℃对薄膜进行快速退火处理。利用X射线衍射(XRD)、拉曼光谱仪(Raman)、原子力显微镜(AFM)、场发射扫描电子显微镜(FE-SEM)、紫外-可见-近红外分光光度计(UV-Vis-NIR)、Keithley 4200-SCS半导体参数分析仪研究了快速退火温度对SnS薄膜的晶体结构、表面形貌以及有关光学性质和电学性能的影响。所制备的SnS薄膜样品沿(111)晶面择优取向生长, 退火温度为400 ℃时的薄膜结晶质量最好。薄膜均具有SnS特征拉曼峰。随着退火温度的升高, 薄膜厚度逐渐减小, 而平均颗粒尺寸逐渐增大。不同退火温度下的SnS薄膜在可见光范围内的吸收系数均为105 cm-1量级, 400 ℃时退火薄膜的直接带隙为1.92 eV。随着退火温度从300 ℃升高到500 ℃, 电阻率由1.85×104 Ω·cm下降到14.97 Ω·cm。

SnS thin films were grown by pulsed laser deposition on glass substrates at room temperature, and then the deposited films were rapidly annealed at 200, 300, 400, 500, 600 ℃ under flowing argon atmosphere. The effects of rapid thermal annealing(RTA) temperature on the microstructural, morphological, optical properties and electrical properties of SnS thin films were studied by X-ray diffraction(XRD), laser Raman spectrometry(Raman), atomic force microscopy(AFM), field emission scanning electron microscopy (FESEM), ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR) and Keithley 4200-SCS semiconductor parameter analyzer. The results show that SnS thin films grow preferentially oriented in the (111) direction, and the crystalline quality of SnS thin films is the best at 400 ℃. Raman characteristic peaks of SnS appear in Raman spectra of the thin films. While the increasing of the annealing temperature, the thickness of the films gradually decrease whereas the average particle sizes of the films increase. The absorption coefficient in the visible region is in the order of 105 cm-1 at different thermal annealing temperature. The direct bandgap of the film is 1.92 eV at 400 ℃. With the increasing of the thermal annealing temperature from 300 to 500 ℃, the resistivity of the films decreases from 1.85×104 to 14.97 Ω·cm.